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DAILY NEWS AND INFORMATION FOR THE GLOBAL GRID COMMUNITY / OCTOBER 13, 2003: VOL. 2 NO. 41

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Toshiba Produces Functional Silicon Using X Architecture

The X Initiative, a semiconductor supply-chain consortium, announced that X Initiative co-sponsor Toshiba Corporation has produced the industry's first functional silicon for the X Architecture. The fabricated 90-nanometer (nm) functional test chip confirms the wire-length and via reduction benefits of the X Architecture and completes the X Initiative's roadmap for preparing the semiconductor design chain for production fabrication of X Architecture chips. In honor of this historic milestone and Toshiba's significant and on-going contribution to the development of the X Architecture, the X Initiative presented Toshiba with the "X Architecture Pioneer" award.

The X Architecture represents a new way of orienting a chip's microscopic interconnecting wires using diagonal pathways, as well as the traditional right-angle, or "Manhattan," configuration. By enabling designs with significantly less wire and fewer vias (the connectors between wiring layers), the X Architecture can provide significant, simultaneous improvement in chip performance, power consumption and cost.

The five-metal-layer Toshiba test chip was fabricated in Toshiba's 90-nm semiconductor process, using its standard process, equipment and materials for this node. Compared to a Manhattan version of the same design, the X Architecture implementation required 14 percent less total wire length and 27 percent fewer vias. The test chip is fully functional at its specified operating frequency.

"Toshiba is very pleased to be able to present the first functional silicon results for the X Architecture," said Takashi Yoshimori, technology executive at Semiconductor Company, Toshiba Corporation. "We have been convinced of the potential benefits of the X Architecture since we first became involved in its development more than four years ago. We are very gratified to see our investment in this new chip architecture rewarded with the positive results from our milestone functional test chip. We are satisfied that we are ready to go to volume production with the X Architecture in 2004."

Toshiba's functional test chip completes the pre-production design-to-silicon roadmap for the X Architecture laid out by the X Initiative in 2002. The focus of the X Initiative's collaborative supply-chain preparation will now shift to enable broad adoption of the X Architecture for production manufacturing at both current (130nm, 90nm) and future (65nm, 45nm and below) manufacturing nodes. First production chips are expected in 2004.

In presenting Toshiba with the X Initiative Pioneer award, Aki Fujimura, X Initiative steering group member and chief technology officer, new business incubation at Cadence Design Systems, Inc., noted, "Toshiba has a long track record of innovation and investment in new technology. As co-developer of the design technology that enables the X Architecture and co-sponsor of the X Initiative, Toshiba has played a central role in bringing this new chip architecture to the marketplace. The results of this first functional silicon confirm the benefits of the X Architecture, and accelerate the adoption of the X Architecture as a production-design option."

About the X Architecture

The X Architecture, the first production-worthy approach to the pervasive use of diagonal interconnect, can reduce the total interconnect, or wiring, on a chip by more than 20 percent and via-counts by more than 30 percent, resulting in simultaneous improvements in chip performance, power and cost. For the past 20 years, chip design has been primarily based on the de facto industry standard "Manhattan" architecture, named for its right-angle interconnects resembling a city-street grid. The X Architecture rotates the primary direction of the interconnect in the fourth and fifth metal layers by 45 degrees from a Manhattan architecture. The new architecture maintains compatibility with existing cell libraries, memory cells, compilers and IP cores by preserving the Manhattan geometry of metal layers one through three.

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